| PART |
Description |
Maker |
| SUF4001 SUF4002 SUF4003 SUF4004 SUF4005 |
HIGH EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A
|
Gulf Semiconductor
|
| HDBL101G HDBL106G |
1A, 50V - 1000V Glass Passivated High Efficient Bridge Rectifiers
|
Taiwan Memory Technolog...
|
| HFM306 HFM308 HFM301 HFM305 |
SMD, High Efficient Rectifier, 600V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 1000V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 50V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 400V, 3A, Silicon Diode
|
Rectron Semiconductor
|
| HERAF808G HERAF80XG HERAF801G HERAF802G HERAF803G |
Isolation 8.0 AMPS. Glass Passivated High Efficient Rectifiers 隔离8.0安培。玻璃钝化高效整流二极管
From old datasheet system
Rectifier: High Efficient
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
|
| HER203G HER204G HER205G HER206G HER207G HER208G |
Ultra Fast Recovery Pack: DO-15
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT 2.0A
|
Gulf Semiconductor
|
| 1U1G 1U2G 1U3G 1U4G 1U5G 1U6G 1U7G |
Ultra Fast Recovery Pack: R-1
FULTRAFAST EFFICIENT GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A
|
Gulf Semiconductor
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| HER508 |
HIGH EFFICIENT
|
EIC discrete Semiconductors
|
| BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| HS2K |
High Efficient Rectifier
|
Yangzhou yangjie electronic co., ltd
|
